Distribution of post-breakdown resistance of MOSTFETs
نویسندگان
چکیده
In this paper, a post-breakdown resistance value of antifuse cells has been calculated with respect to breakdown spots. Also, the effect of body doping concentration and source/drain abruptness on the post-breakdown resistance has been observed in the case of gate underlap and overlap structures. Based on simulation results, we have proposed some ways of making the post-breakdown resistance distribution uniform.
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عنوان ژورنال:
- IEICE Electronic Express
دوره 8 شماره
صفحات -
تاریخ انتشار 2011